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1

Design rules for field plate edge termination in SiC Schottky diodes

Tarplee, M.C., Madangarli, V.P., Quinchun Zhang, Sudarshan, T.S.

Journal:

IEEE Transactions on Electron Devices

Year:

2001

Language:

english

File:

PDF, 165 KB

english, 2001

2

The Response of High Voltage 4H-SiC P-N Junction Diodes to Different Edge Termination Techniques

Oder, T. N., Tin, C. C., Williams, J. R., Isaacs-Smith, T., Madangarli, V., Sudarshan, T. S.

Journal:

MRS Proceedings

Year:

1998

Language:

english

File:

PDF, 393 KB

english, 1998

3

[IEEE ICSE '96. 1996 IEEE International Conference on Semiconductor Electronics. Proceedings - Penang, Malaysia (26-28 Nov. 1996)] ICSE '96. 1996 IEEE International Conference on Semiconductor Electronics. Proceedings - Electric field breakdown mechanisms in high power epitaxial 4H-SiC p-n junction diodes

Tin, C.C., Madangarli, V., Luckowski, E., Casady, J., Isaacs-Smith, T., Williams, J.R., Johnson, R.W., Gradinaru, G., Sudarshan, T.S.

Year:

1996

Language:

english

File:

PDF, 371 KB

english, 1996

4

A strategy for mixed-signal yield improvement

Bordelon, J., Tranchina, B., Madangarli, V., Craig, M.

Journal:

IEEE Design & Test of Computers

Year:

2002

Language:

english

File:

PDF, 334 KB

english, 2002

5

High Electric Field Breakdown of 4H-SiC PN Junction Diodes

Tin, C. C., Madangarli, V., Hu, R., Luckowski, E., Casady, J., Isaacs-Smith, T., Gradinaru, G., Sudarshan, T. S., Johnson, R. W.

Journal:

MRS Proceedings

Year:

1996

Language:

english

File:

PDF, 1.46 MB

english, 1996

6

SiC planar MOS-Schottky diode: a high voltage Schottky diode with low leakage current

Q. Zhang, V. Madangarli, T.S. Sudarshan

Journal:

Solid-State Electronics

Year:

2001

Language:

english

File:

PDF, 293 KB

english, 2001

7

Current–voltage characteristics of an integrated Schottky diode

M Tarplee, V Madangarli, T.S Sudarshan

Journal:

Solid-State Electronics

Year:

2002

Language:

english

File:

PDF, 167 KB

english, 2002

8

Structural defect visualization and oxide breakdown in SiC wafers after thermal oxidation

T.S Sudarshan, S Soloviev, I Khlebnikov, V Madangarli

Journal:

Materials Science and Engineering: B

Year:

1999

Language:

english

File:

PDF, 320 KB

english, 1999

9

Comparison of current-voltage characteristics of n- and p-type 6H-SiC Schottky diodes

Q. Zhang, V. Madangarli, M. Tarplee, T. S. Sudarshan

Journal:

Journal of Electronic Materials

Year:

2001

Language:

english

File:

PDF, 223 KB

english, 2001

10

Correlation between oxide breakdown and defects in SiC wafers

S. Soloviev, I. Khlebnikov, V. Madangarli, T. S. Sudarshan

Journal:

Journal of Electronic Materials

Year:

1998

Language:

english

File:

PDF, 317 KB

english, 1998

11

Surface flashover in silicon-vacuum systems

Gradinaru, G., Madangarli, V.P., Sudarshan, T.S.

Journal:

IEEE Transactions on Electrical Insulation

Year:

1993

Language:

english

File:

PDF, 938 KB

english, 1993

12

The influence of the semiconductor and dielectric properties on surface flashover in silicon-dielectric systems

Gradinaru, G., Madangarli, V.P., Sudarshan, T.S.

Journal:

IEEE Transactions on Electron Devices

Year:

1994

Language:

english

File:

PDF, 695 KB

english, 1994

13

Influence of contact architecture on the high-field characteristics of planar silicon structures

Madangarli, V.P., Korony, G., Gradinaru, G., Sudarshan, T.S.

Journal:

IEEE Transactions on Electron Devices

Year:

1996

Language:

english

File:

PDF, 903 KB

english, 1996

14

Phosphoenolpyruvate synthesis by fetal guinea-pig liver mitochondria

Parameswaran, Madangarli, Arinze, Ifeanyi J.

Journal:

Biochimica et Biophysica Acta (BBA) - General Subjects

Year:

1981

Language:

english

File:

PDF, 280 KB

english, 1981

15

[IEEE Twenty-First International Power Modulator Symposium, Conference - Costa Mesa, CA, USA (June 27-30, 1994)] Twenty-First International Power Modulator Symposium, Conference - Influence Of Electrode Geometry On The High-field Characteristics Of Photoconductive Silicon Wafers

Madangarli, V.P., Gradinaru, G., Korony, G., Sudarshan, T.S., Loubriel, G.M., Zutavern, F.J., Patterson, P.E.

Year:

1994

Language:

english

File:

PDF, 534 KB

english, 1994

16

[IEEE Ninth IEEE International Pulsed Power Conference - Albuquerque, NM (June 21-23 1993)] Ninth IEEE International Pulsed Power Conference - COMPARISON OF "DARK" CURRENT CHARACTERISTICS OF CYLINDRICAL vs WAFER CONFIGURATIONS OF PHOTOCONDUCTI

Madangarli, V.P., Gradinaru, G., Li, C.R., Vaidya, M.R., Sudarshan, T.S.

Year:

1993

Language:

english

File:

PDF, 517 KB

english, 1993

17

[IEEE Twentieth Conference Record on Power Modulator Symposium - Myrtle Beach, SC (June 23-25 1992)] Twentieth Conference Record on Power Modulator Symposium - IMPROVED VOLTAGE HOLD-OFF CAPABILITY OF PHOTOCONDUCTIVE SILICON IN SF/sub 6/ ENVIRONMENT

Madangarli, V.P., Gradinaru, G., Zutavern, F.J., Sudarshan, T.S., Loubriel, G.M.

Year:

1992

Language:

english

File:

PDF, 667 KB

english, 1992

18

On the negative differential resistance effect in high-field semiconductor-dielectric systems

Gradinaru, G., Madangarli, V. P., Sudarshan, T. S.

Journal:

Applied Physics Letters

Year:

1992

Language:

english

File:

PDF, 527 KB

english, 1992

19

[IEEE Digest of Technical Papers. Tenth IEEE International Pulsed Power Conference - Albuquerque, NM, USA (3-6 July 1995)] Digest of Technical Papers. Tenth IEEE International Pulsed Power Conference - A compact Blumlein PFN with optimized performance index

Sudarshan, T.S., Madangarli, V., Shengyi Liu,, Chengrong Li,

Year:

1995

Language:

english

File:

PDF, 444 KB

english, 1995

20

A Non-Destructive Technique for High Field Characterization of Gate Insulators in SiC MOS Capacitors

Madangarli, V., Sudarshan, Tangali S.

Journal:

Materials Science Forum

Year:

1998

File:

PDF, 325 KB

1998

21

Thick Film SiC Epitaxy for 'Filling Up' Micropipes

Khlebnikov, I.I., Madangarli, V., Khan, M.A., Sudarshan, Tangali S.

Journal:

Materials Science Forum

Year:

1998

File:

PDF, 438 KB

1998

22

Lateral Current Spreading in SiC Schottky Diodes using Field-Plate Edge Termination

Zhang, Q., Madangarli, V., Tarplee, M., Sudarshan, Tangali S.

Journal:

Materials Science Forum

Year:

2000

File:

PDF, 295 KB

2000

23

Rapid Anodic Oxidation of 6H-SiC

Khlebnikov, Yuri I., Madangarli, V., Khan, M.A., Sudarshan, Tangali S.

Journal:

Materials Science Forum

Year:

1998

File:

PDF, 299 KB

1998

24

Computer Simulation of P-type SiC Schottky Diode using ATLAS

Tarplee, M., Madangarli, V., Zhang, Q., Palmer, P., Sudarshan, Tangali S.

Journal:

Materials Science Forum

Year:

2000

File:

PDF, 322 KB

2000

25

Comparison of Figures-of-Merit of N and P SiC Schottky Diodes with Ni Schottky Contacts at High Temperatures

Tarplee, M., Madangarli, V., Sudarshan, T. S.

Journal:

Japanese Journal of Applied Physics

Year:

2002

Language:

english

File:

PDF, 142 KB

english, 2002

26

Characterization of 4H-SiC MOS Capacitors by a Fast-Ramp Response Technique

Sudarshan, T. S., Madangarli, V. P., Gradinaru, G., Tin, C. C., Hu, R., Isaacs-Smith, T.

Journal:

MRS Proceedings

Year:

1996

Language:

english

File:

PDF, 362 KB

english, 1996

27

A Technique For Rapid Thick Film Sic Epitaxial Growth

Khlebnikov, I., Sudarshan, T. S., Madangarli, V., Capano, M. A.

Journal:

MRS Proceedings

Year:

1997

Language:

english

File:

PDF, 1.50 MB

english, 1997

28

SiC Epitaxial Growth on Carbon

Khlebnikov, I., Madangarli, V., Sudarshan, T. S.

Journal:

MRS Proceedings

Year:

1997

Language:

english

File:

PDF, 1.99 MB

english, 1997

29

Comparison of High Field Characteristics of SiO2 and AIN Gate Insulators in 6H SiC MOS Capacitors

Madangarli, V. P., Sudarshan, T. S., Tin, C. C.

Journal:

MRS Proceedings

Year:

1998

Language:

english

File:

PDF, 383 KB

english, 1998

30

Correlation Between Oxide Breakdown And Defects In Sic Wafers

Soloviev, S., Khlebnikov, I., Madangarli, V., Sudarshan, T. S.

Journal:

MRS Proceedings

Year:

1998

Language:

english

File:

PDF, 1.77 MB

english, 1998

31

High Voltage Schottky Barrier Diodes on P-Type SiC using Metal-Overlap on a Thick Oxide Layer as Edge Termination

Zhang, Q., Madangarli, V., Soloviev, S., Sudarshan, T. S.

Journal:

MRS Proceedings

Year:

1999

Language:

english

File:

PDF, 364 KB

english, 1999

32

Thick Oxide Layers on N and P SiC Wafers by a Depo-Conversion Technique

Zhang, Q., Madangarli, V., Khlebnikov, I., Soloviev, S., Sudarshan, T. S.

Journal:

MRS Proceedings

Year:

1999

Language:

english

File:

PDF, 284 KB

english, 1999

33

Comparison of Current – Voltage Characteristics of N and P Type 6H-SiC Schottky Diodes

Zhang, Q., Madangarli, V., Gao, Y., Sudarshan, T. S.

Journal:

MRS Proceedings

Year:

2000

Language:

english

File:

PDF, 221 KB

english, 2000

34

SPIE Proceedings [SPIE SPIE Advanced Lithography - San Jose, California (Sunday 21 February 2010)] Metrology, Inspection, and Process Control for Microlithography XXIV - Electrical validation of through process OPC verification limits

Jaiswal, Omprakash, Raymond, Christopher J., Kuncha, Rakesh, Bharat, Taksh, Madangarli, Vipin, Conrad, Edward, Bruce, James, Marokkey, Sajan

Year:

2010

Language:

english

File:

PDF, 1.05 MB

english, 2010

35

SPIE Proceedings [SPIE OE/LASE'93: Optics, Electro-Optics, & Laser Applications in Science& Engineering - Los Angeles, CA (Sunday 17 January 1993)] Optically Activated Switching III - New results on surface flashover in silicon-dielectric systems

Gradinaru, Gheorghe, Madangarli, V. P., Sudarshan, Tangali S., Falk, R. Aaron

Year:

1993

Language:

english

File:

PDF, 795 KB

english, 1993

36

[ASCE AIP Conference Proceedings Volume 387 - Albuquerque, New Mexico (USA) (26-30 Jan 1997)] Space technology and applications international forum (STAIF - 97) - Aluminum nitride for 6H-SiC power devices

Tin, Chin-Che, Isaacs-Smith, Tamara, Song, Yan, Luckowski, Eric, Madangarli, Vipin, Sudarshan, Tangali S., Gichuhi, Anthony, Shannon, Curtis

Year:

1997

Language:

english

File:

PDF, 1.08 MB

english, 1997

37

Relationship of Mitochondrial Phosphoenolpyruvate Carboxykinase to Neonatal Gluconeogenesis

Parameswaran, Madangarli, Arinze, Ifeanyi J.

Journal:

Year:

1981

Language:

english

File:

PDF, 588 KB

english, 1981

38

Intracerebral Hemorrhage: Blood Components and Neurotoxicity

Madangarli, Neha, Bonsack, Frederick, Dasari, Rajaneekar, Sukumari–Ramesh, Sangeetha

Journal:

Year:

2019

Language:

english

File:

PDF, 426 KB

english, 2019

39

Intracerebral Hemorrhage: Blood Components and Neurotoxicity

Madangarli, Neha, Bonsack, Frederick, Dasari, Rajaneekar, Sukumari–Ramesh, Sangeetha

Journal:

Year:

2019

File:

PDF, 426 KB

2019

40

[AIP Space technology and applications international forum: 1st conference on commercial development of space; 1st conference on next generation launch systems; 2nd spacecraft thermal control symposium; 13th symposium on space nuclear power and propulsion - Albuquerque, New Mexico (USA) (7−11 Jan 1996)] AIP Conference Proceedings - Electro-thermal stress and high electric field effects in CVD-Grown 4H-SiC P-N junction diodes

Tin, Chin-Che, Hu, Rongxiang, Lang, Manfred, Isaacs-Smith, Tamara, Madangarli, Vipin, Gradinaru, George, Sudarshan, Tangali, Sheridan, David, Casady, Jeffrey

Year:

1996

File:

PDF, 884 KB

1996